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FMS: 2311-Series Drives With Toshiba Memory XL-Flash Based NVMe SSDs From Goke Microelectronics

Supporting up to 4TB with maximum write bandwidth of 1GB/s and read bandwidth of 3GB/s through PCIe Gen3x4 interface

As provider of SSD controllers and storage solutions, Goke Microelectronics Co. Ltd. was invited to FMS to demonstrate an low latency NVMe SSD based on Toshiba Memory Corp.‘s XL-flash memory.

Goke Microelectronics Ssd

One year ago, Toshiba Memory announced XL-flash at FMS, promising to use low latency 3D SLC flash to reduce read latency to 5µs, which is equivalent to 1/10th of read latency of 3D TLC NAND.

The 2311-series drives are based on the 2311 SSD controller and are paired with XL-flash memory. The prototype of 2311-series drives have implemented an overall 4K random read latency under 20µs and the final drives will offer a 4K random read latency in less than 15µs. It drives support up to 4TB capacity with a maximum write bandwidth of 1GB/s and read bandwidth of 3GB/s through a PCIe Gen3x4 interface. They will also support SM2/3/4 and SHA-256/AES-256 with built-in security engines.

Toshiba Memory is very pleased to see the successful integration of Toshiba Memory’s XL-flash product with Goke’s products. The low-latency characteristic has been demonstrated on Goke’s flagship NVMe-SSD controller,” said Hiroo Ota, technology executive, memory application engineering, Toshiba Memory.

Goke 2311 drives will be expected to be in production in 2020.

About Goke Microelectronics
It is committed to developing mass-volume IC solutions for smart set-top boxes, intelligent surveillance, IOT devices, and storage systems. It has introduced a series of products with in-house IP. These include ASICs and SOCs that incorporate the NDS security decoder, the H.265 high-definition codec, performance acoustic processor, Wi-Fi, enterprise SSD controller, and high-definition surveillance monitoring. These products are intended for domestic consumption as well as export purposes.

Resource:
US website

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