Rohm Assigned Patent

Rohm Co., Ltd., Kyoto, Japan, has been assigned a patent (10,381,082) developed by Okamoto, Tsuyoshi, Ukai, Kazuhisa, and Yamamoto, Seiichi, Kyoto, Japan, for a “nonvolatile semiconductor storage device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A nonvolatile semiconductor storage device has floating-gate memory cells and a memory control circuit which controls them. During programming operation of the memory cells, the memory control circuit makes the potentials at the backgate and source of the memory cells equal. For example, during programming operation of the memory cells, the memory control circuit short-circuits together the backgate and source of the memory cells. For another example, during programming operation of the memory cells, the memory control circuit switches from a state where the potentials at the backgate and source of the memory cells are equal to a floating state.”

The patent application was filed on April 30, 2018 (15/966,178).