R&D: 3D Cross-Point Phase-Change Memory for Storage-Class Memory

Journal of Physics D: Applied Physics has published an article written by Huai-Yu Cheng, Emerging Central Lab., Macronix International Co., Ltd., Hsinchu, Taiwan, Fabio Carta, IBM T. J. Watson Research Center, Yorktown Heights, New York, USA, Wei-Chih Chien, Hsiang-Lan Lung, Emerging Central Lab., Macronix International Co., Ltd., Hsinchu, Taiwan, and Matthew J. BrightSky, IBM T. J. Watson Research Center, Yorktown Heights, New York, USA.

Abstract: “We survey progress in the 3D cross-point PCM field over the past years, starting from the choices of 3D-capable access devices to candidate OTS materials, particularly with high cycling endurance and good thermal stability. First, we discuss 3D integration challenges faced when combining OTS and PCM. Then, we review the operation scheme of the OTS+PCM cross-point devices as well as the criteria that OTS access device needs to meet (e.g. Vth and IOFF) to successfully operate true cross-point array. We also review As and non-As-based OTS materials and discuss their properties as well as the ones of phase-change materials, focusing in particular on fast switching speed and long endurance compounds, which are among the one proposed for SCM. Finally, we briefly survey recent work on OTS integrated with PCM in the stackable devices for SCM application.“