EpoStar Electronics Assigned Patent
Memory management and storage controller
By Francis Pelletier | August 20, 2019 at 2:07 pmShenzhen EpoStar Electronics Ltd. Co., Shenzhen, China, has been assigned a patent (10,360,986) developed by Hsiao, Yu-Hua, Hsinchu County, Taiwan, and Yang, Yi-Ming, New Taipei, Taiwan, for “memory management method and storage controller.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A memory management method and a storage controller are provided. The memory management method includes: dividing a plurality of word lines of a first block into a plurality of word line groups and recording a characteristic value for each of the word line groups, accumulating the characteristic values of a second word line group and a third word line group when reading a first word line group, wherein the second word line group and the third word line group are directly adjacent to the first word line group, and reading the second word line group via a first optimal read voltage group when the characteristic value of the second word line group is greater than a first threshold, wherein the first optimal read voltage group is different from a default read voltage group corresponding to the second word line group.”
The patent application was filed on June 5, 2018 (15/997,716).