Lite-On Assigned Patent
Solid state storage device and reading control
By Francis Pelletier | August 9, 2019 at 2:20 pmLite-On Electronics, Guangzhou) Ltd., Guangzhou, China, and Lite-On Technology Corp., Taipei, Taiwan, has been assigned a patent (10,347,330) developed by Zeng, Shih-Jia, and Fu, Jen-Chien, Taipei, Taiwan, for “solid state storage device and reading control method thereof for read retry process with optimal read voltage set.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A reading control method for a solid state storage device includes following steps. While the solid state storage device is in an idle mode, a background monitoring operation is performed on the first block and the second block. Consequently, a first optimal read voltage set corresponding to the first block and a second optimal read voltage set corresponding to the second block are acquired. In reading operation, a default read voltage set is provided to the non-volatile memory to read a data of the first block. If a data of the first block is not successfully decoded, a read retry process is performed on the first block and the first optimal read voltage set is provided to the non-volatile memory to read the data of the first block.”
The patent application was filed on February 2, 2016 (15/013,023).