R&D: High Speed Test System of Current Pulse for Phase Change Memory Devices

Journal of Physics, Conference Series, has published, in Volume 1237, Automation engineering and intelligent application, an article written by Yuhan Wang, School of Electrical and Electronic Engineering, Chongqing University of Technology, Chongqing, 400054, China, Ziqiang Zeng, Department of electronic engineering, Chongqing Aerospace Polytechnic, Chongqing, 400021, China, Yuchan Wang, School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China, Xia Xu and Liangling Gu, School of Electrical and Electronic Engineering, Chongqing University of Technology, Chongqing, 400054, China.

Abstract: “The high-speed test system of current pulses for T-shaped phase change memory (PCM) cells has been studied. This system, which is able to provide the narrowest width of 500 ns, can apply direct current source pulses to the PCM device to do SET and RESET operation. The reliability of the system has been verified through the fixed resistor and the real PCM cells. The test results are presented and analyzed.“

The following article is OPEN ACCESS. Published under licence by IOP Publishing Ltd.