Winbond: Accelerated Roll-Out of 5G CPE Modems With 2Gb NAND+2Gb LPDDR4x Multi-Chip Package

Winbond Electronics Corporation announced a 1.8V 2Gb+2Gb NAND flash and LPDDR4x memory product in a 8.0×9.5×0.8mm multi-chip package (MCP).

The W71NW20KK1KW product, which combines SLC NAND flash and high-speed, low-power LPDDR4x memory, provides sufficient memory capacity for 5G cellular modems that are intended for use as ‘Customer Premises Equipment’ (CPE) in homes and offices.

While mobile 5G modems typically require larger memory densities, static 5G CPE modems can operate with memory capacities of 2Gb NAND/2Gb DRAM. By offering this memory combination in a compact single package, the company’s W71NW20KK1KW enables 5G modem manufacturers to meet the system requirements of CPE units at low materials and production cost.

It is expected that the introduction of a new generation of cost-optimized 5G CPE units incorporating the W71NW20KK1KW will help to accelerate consumer adoption of 5G as an alternative to fixed-line copper or optical xDSL links in the last mile of high-speed broadband networks.

Wilson Huang, product marketing manager, Winbond, said: “The 2Gb+2Gb MCP from Winbond is ideal for the cellular market’s next phase of growth as it starts to install static 5G CPE units in homes and offices. Winbond is now the only MCP chip manufacturer in the world that produces both NAND and LPDDR4x in its own wafer fabrication plants. Because Winbond is completely in control of the production of the memory components, customers ordering the W71NW20KK1KW MCP in production volumes can rely 100% on Winbond’s assurances of supply quantities and schedules, quality and service.“

The W71NW20KK1KW is a 149-ball Ball Grid Array (BGA) MCP consisting of a 2Gb SLC NAND flash die and a 2Gb LPDDR4x DRAM die. The SLC NAND flash offers endurance specs and high data integrity. It requires 4-bit ECC to achieve high data integrity, but the device’s 2KB+128B page size provides enough space for the use of 8-bit ECC.

The W71NW20KK1KW has an 8-bit bus, and is organized in blocks of 64 pages. The NAND die’s performance specifications include a maximum page read time of 25µs and a typical page program time of 250µs.

The LPDDR4x DRAM die, which operates at a frequency of 1866MHz, provides an LVSTL_11 interface and features 8 internal banks for concurrent operation. It offers a data rate of up to 4267MT/s, supporting the fast data-transfer rates to be offered by 5G cellular networks.

The W71NW20KK1KW is available in production volumes.