Everspin in Pilot Production Phase for 28nm 1GB STT-MRAM Component

Everspin Technologies, Inc. completed development activity and entered the pilot production phase of its 28nm 1Gb Spin Torque Transfer Magnetoresistive Random Access Memory (STT-MRAM) product.

The company has been in volume production of 256Mb STT-MRAM product for more than a year and now adds this 1GB capacity product to its lineup, extending the firm’s leadership in STT-MRAM memory component manufacturing.

Everspin Spin-transfer Torque MRAM Technology

The company’s STT-MRAM devices enable enterprise infrastructure and data center providers to increase the reliability and performance of systems where high-performance data persistence is critical by delivering protection against power loss without the use of supercapacitors or batteries.

In addition, the larger density 1GB part offers more effective management of I/O streams, creating a greater level of latency determinism and allowing storage OEMs to improve QoS of their products.

Similar benefits can also be achieved using the 1GB STT-MRAM device as a persistent data buffer in storage and fabric accelerators, computational storage, and other applications.

“The Everspin team has executed extremely well on completing development of our ground-breaking 1GB STT-MRAM devices. This is yet another bellwether milestone on STT-MRAM’s march into larger market opportunities delivering a significant increase in density over our previous 256Mb parts coupled with the more mainstream DDR4-based interface,” said Kevin Conley, president and CEO, Everspin. “We are also pleased that progress with both customer qualification and yield maturity continues to be on track with volume production expected to start in the third quarter.“

The company’s 1GB product family includes both 8-bit and 16-bit DDR4 compatible (ST-DDR4) interface versions of the device and are available in a JEDEC-compliant BGA package.