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R&D: Temperature Below 200°C Solution Processed Tunable Flash Memory Device Without Tunneling and Blocking Layer

Memory storage capacity is tuned systematically up to 96% by controlling trap density with increasing heating temperature.

Nature Communications has published an article written by Sandip Mondal, Department of Physics, Indian Institute of Science, Bangalore, 560012, India, Present address: SanDisk (Western Digital Corporation) India Device Design Center, Bangalore, 56010...

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