Vanguard International Semiconductor Assigned Patent

Vanguard International Semiconductor Corporation, Hsinchu, Taiwan, has been assigned a patent (10,256,310) developed by Kumar, Manoj, Kumar, Ankit, Jharkhand, India, Lee, Chia-Hao, New Taipei, Taiwan, and Liao, Chih-Cherng, Jhudong Township, Taiwan, for a “split-gate flash memory cell having a floating gate situated in a concave trench in a semiconductor substrate.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A split-gate flash memory cell is provided. The split-gate flash memory cell includes a semiconductor substrate having a source region and a drain region. The source region and the drain region are separated by a channel region. The split-gate flash memory cell also includes a concave trench in the semiconductor substrate, a floating gate dielectric lining the concave trench, and a floating gate situated in the concave trench on the floating gate dielectric. The floating gate has a convex bottom surface. The split-gate flash memory cell also includes an inter-gate dielectric on the floating gate, and a control gate on the inter-gate dielectric.”

The patent application was filed on December 4, 2017 (15/830,662).