NXP Assigned Patent

NXP USA, Inc., Austin, TX, has been assigned a patent (10,229,025) developed by He, Xuewen, Geng, Xiaoxiang, and Zhang, Lei, Suzhou, China, for a “non-volatile memory repair circuit.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”An integrated circuit includes on-chip flash memory, a EEPROM, cache memory, and a repair controller. When a defective address is detected in the flash memory, data slotted to be stored at the defective address is stored in the EEPROM by the repair controller. The cache memory includes a content addressable memory, (CAM) that checks read addresses with the defective memory address and if there is a match, the data stored in the EEPROM is moved to the cache so that it can be output in place of data stored at the defective location of the flash memory. The memory repair system does not require any fuses nor is the flash required to include redundant rows or columns. Further, defective addresses can be detected and repaired on-the-fly.”

The patent application was filed on May 12, 2017 (15/593,326).