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R&D: Micromagnetic Study of Cooling Effect on Writing Field of BaFe, Pt/MnSb and CoFeAl

Paper presents performance comparison of BaFe, Pt/MnSb, and CoFeAl for HAMR applications regarding impact of cooling time on magnitude of writing field using Micromagnetic Simulator.

Journal of Physics: Conference Series has published an article written by Nur Aji Wibowo, Department of Physics, Universitas Kristen Satya Wacana, Indonesia, and Study Center for Multidisciplinary Applied Research and Technology, Universitas Kristen Satya Wacana, Indonesia, Ch Fendy Irawan, Department of Physics, Universitas Kristen Satya Wacana, Indonesia, and Andreas Setiawan, Universitas Kristen Satya Wacana, Indonesia, and Study Center for Multidisciplinary Applied Research and Technology, Universitas Kristen Satya Wacana, Indonesia.

Abstract: This paper presents a performance comparison of BaFe, Pt/MnSb, and CoFeAl for HAMR applications regarding the impact of cooling time on the magnitude of the writing field using Micromagnetic Simulator. The materials were selected for study because they possess high magnetic anisotropy and thus have the potential to be used as HDD medium with high-density HAMR technology. However, this material has different characteristics. The magnetic parameters used in this study represent the characteristics of BaFe, Pt/MnSb, and CoFeAl with each Gilbert damping was set to 0.3. The materials were modelled in the form of a parallel-pipe which its dimension was 50×50×20 nm3. The simulation scheme used double pulses that are field pulses and thermal pulses. Field pulses were applied to drive the magnetic polarization of the nano-dot while the thermal pulse was used to heat the nano-dot up to close the Curie temperature and then freeze it to room temperature with a variety of cooling time in the range 100 – 2000ps. As a result, BaFe and Pt/MnSb have an advantage regarding writing field consumption which is relatively lower than CoFeAl. The magnetization behavior of CoFeAl is different compared to others where the domain wall is formed from the beginning without going through random magnetization phases.

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