Ovonyx Assigned Patent

Ovonyx Memory Technology LLC, Alexandria, VA, has been assigned a patent (10,186,659) developed by Pellizzer, Fabio, Cornate D’Adda, Italy, and Tortorelli, Innocenzo, Moncalieri, Italy, for “method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact cross references“.

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Embodiments disclosed herein may include depositing a storage component material over and/or in a trench in a dielectric material, including depositing the storage component material on approximately vertical walls of the trench and a bottom of the trench. Embodiments may also include etching the storage component material so that at least a portion of the storage component material remains on the approximately vertical walls and the bottom of the trench, wherein the trench is contacting an electrode and a selector such that storage component material on the bottom of the trench contacts the electrode”.

The patent application was filed on January 22, 2018 (15/876,886).