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Samsung Electronics Assigned Eight Patents

Storage device including internal hardware filter and data processing, storage apparatus, coding unit, storage device including nonvolatile memory, operating storage device determining wordlines for writing user data depending on reuse period, storage device including nonvolatile memory, storage device including buffer and main memories, storage devices including storage controller circuits, controlling temperature of non-volatile storage device

Data storage device including internal hardware filter and data processing
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, Korea, has been assigned a patent (10,133,785) developed by Kim, Kwang-Hoon, Uiwang-si, Korea, Seo, Man-Keun, Hwaseong-si, Korea, and Jeong, Sang-Kyoo, Seoul, Korea, for a “data storage device including internal hardware filter and data processing system.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A data storage device includes a first memory device configured to provide first read data in response to a first read command, a controller including a hardware filter configured to generate first hint information based on a result of comparison of the first read data with filtering condition data and a processor configured to determine whether the first read data is to be filtered based on the first hint information, selectively filter the first read data based on the filtering condition data based on the determination result, and generate first filtered data, and a second memory device configured to store the first filtered data. The controller communicates the first filtered data to a host.

The patent application was filed on December 28, 2015 (14/979,796).

Data storage apparatus, coding unit
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, Korea, has been assigned a patent (10,133,680) developed by Kang, Dong-Ku, Suwon-si, Korea, for “
data storage apparatus, coding unit, systems including the same, method of coding and method of reading data.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “In one embodiment, the data storage apparatus includes a control unit configured to decode at least one input command and configured to generate at least one of a read signal and a start signal in response to the input command. The start signal indicates to start an internal mode determination process. The data storage apparatus also includes a memory unit configured to output data in response to the read signal, and a coding unit configured to start and perform the internal mode determination process in response to the start signal. The internal mode determination process includes autonomously determining a coding mode, and the coding unit is configured to code the output data based on the determined coding mode to produce coded data.

The patent application was filed on June 15, 2016 (15/183,319).

Data storage device including nonvolatile memory
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, Korea, has been assigned a patent (10,133,665) developed by Moon, Sangkwon, Osan-si, Korea, Lee, Seung-Yeon, Seoul, Korea, Lee, Heewon, Suwon-si, Korea, Doh, In Hwan, Seoul, Korea, and Kang, NamWook, Hwaseong-si, Korea, for a “
data storage device including nonvolatile memory device and operating method thereof.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method of operating a data storage device includes programming non-fully programmed memory blocks at a point in time when a reference time elapses from a point in time when each of the memory blocks is physically erased, acquiring a first interval and a second interval, calculating a disturb index based on the first interval and the second interval, selecting a victim block for garbage collection based on the disturb index, and copying valid page data of the victim block into a free block. The first interval is defined by a point in time when each of the memory blocks is physically erased and a point in time when each of the memory blocks is fully programmed. The second interval is an interval during which a fully programmed state is maintained after a point in time when each of the memory blocks is fully programmed.

The patent application was filed on September 12, 2017 (15/701,978).

Operating storage device determining wordlines for writing
user data depending on reuse period

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, Korea, has been assigned a patent (10,127,984) developed by Moon, Sangkwon, Osan-si, Korea, Lee, Heewon, Suwon-si, Korea, and Ahn, Seongjun, Seoul, Korea, for a “
method for operating storage device determining wordlines for writing user data depending on reuse period.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Embodiments include a method of operating a storage device including a flash memory, comprising: calculating a reuse period of a selected memory block in the flash memory, determining a set of wordlines of the selected memory block for writing data based on the reuse period of the selected memory block, and writing the data into the set of wordlines.

The patent application was filed on August 23, 2016 (15/245,164).

Storage device including nonvolatile memory
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, Korea, has been assigned a patent (10,121,543) developed by Oh, Eun Chu, Hwaseong-si, Korea, Kong, Jun Jin, Yongin-si, Korea, Son, Hong Rak, Anyang-si, Korea, and Yoon, Pilsang, Hwaseong-si, Korea, for a “
storage device including a nonvolatile memory device and a controller for controlling a write operation of the nonvolatile memory device and an operating method of the storage device.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A storage device includes a nonvolatile memory device including a plurality of memory cells, the memory cells divided into a plurality of pages, and a controller configured to control the nonvolatile memory device. The storage device is configured to collect two or more write data groups to be written to two or more pages, to simultaneously perform a common write operation with the two or more pages based on the two or more write data groups, and to sequentially perform an individual write operation with each of the two or more pages based on the two or more write data groups.

The patent application was filed on April 6, 2016 (15/092,108).

Storage device including buffer and main memories
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, Korea, has been assigned a patent (10,120,794) developed by Shin, Dongjun, Hwaseong-si, Korea, for a “
storage device including buffer and main memories, and user device including the same.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A storage device includes a nonvolatile memory including a buffer region and a main region, and a memory controller responsive to a write request to store successively received blocks of write data at the nonvolatile memory. The memory controller is configured to initially store blocks among the successively received blocks of write data in the main region of the nonvolatile memory, and to subsequently store remaining blocks among the successively receive blocks of write data in the buffer region when a continuity count exceeds a reference count. The continuity count denotes a number of times a data size of the successively received blocks consecutively equals or exceeds a reference data size.

The patent application was filed on January 12, 2016 (14/993,146).

Data storage devices including storage controller circuits
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, Korea, has been assigned a patent (10,120,606) developed by Kim, Min-Uk, Incheon, Korea, and Choi, Moon-Sung, Seongnam-si, Korea, for “
data storage devices including storage controller circuits to select data streams based on application tags and computing systems including the same.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A data storage device includes a nonvolatile memory device including a plurality of memory blocks, and a storage controller that manages a plurality of streams in the plurality of memory blocks. The storage controller receives, from a host, a write command that requests a write operation and a data block including write data and an application tag appended to the write data, and selects one of the plurality of streams based on the application tag included in the data block. The storage controller writes the write data included in the data block into the selected one of the plurality of streams.

The patent application was filed on December 6, 2016 (15/369,952).

Controlling temperature of non-volatile storage device
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, Korea, has been assigned a patent (10,120,593) developed by Byun, Jae-beom, Suwon-si, Korea, Zhao, Hu, Park, Jong-gyu, Kong, Do-il, Ryu, Chung-hyun, Hwaseong-si, Korea, and Shim, Eok-soo, Suwon-si, Korea, for a “
method of controlling temperature of non-volatile storage device.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method of controlling a temperature of a non-volatile storage device includes determining whether the temperature of the non-volatile storage device is greater than a control engagement temperature, and adjusting a data I/O performance level P when the temperature of the non-volatile storage device is greater than the control engagement temperature. The non-volatile storage device may operate at the maximum performance level in a range in which the non-volatile storage device is protected from heat.

The patent application was filed on May 20, 2016 (15/160,212).

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