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NGD Systems Assigned Patent

Supporting atomic writes in flash translation layer

NGD Systems, Inc., Irvine, CA, has been assigned a patent (10,101,930) developed by Salessi, Nader, Laguna Niguel, CA, and Alcantara, Joao, Irvine, CA, for “system and method for supporting atomic writes in a flash translation layer.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method for memory-efficient backup of a logical-to-physical, (LtoP) table in a storage device having a processor, a volatile memory, and a non-volatile memory, includes retrieving and subsequently processing, by the processor, a plurality of flushed zone segments stored in a first block stripe of the non-volatile memory in an order opposite to an order of storage of the plurality of flushed zone segments in the first block stripe in the non-volatile memory, wherein the processing of the plurality of flushed zone segments includes identifying a retrieved flushed zone segment of the plurality of flushed zone segments differing from all previously retrieved plurality of flushed zone segments, and writing the identified retrieved flushed zone segment of the plurality of flushed zone segments to a second block stripe of the non-volatile memory.

The patent application was filed on September 30, 2016 (15/281,902).

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