Innodisk Assigned Patent

Innodisk Corporation, New Taipei, Taiwan, has been assigned a patent (10,102,916) developed by Kao, Chih-Chieh, and Tsai, Yueh-Feng, New Taipei, Taiwan, for a “flash memory device having abnormal power protection.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The invention provides a flash memory device, which comprises a controller, a plurality of flash memories, a switcher, a power supply module, and a voltage detection circuit. When the system voltage is higher than a voltage threshold, the voltage detection circuit outputs an enable signal to the switcher to turn on the switcher, the system voltage is provided to the power supply module, the power supply module executes a charging process by the system voltage, and generates an output voltage based on the system voltage. The output voltage is an operating voltage of the controller and the flash memories. When the system voltage is lower than the voltage threshold, the voltage detection circuit outputs a disable signal to the switcher to turn off the switcher, the system voltage is inhibited to provide to the power supply module, the power module generates the output voltage by executing a discharging process.”

The patent application was filed on September 15, 2017 (15/705,754).