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Nuvoton Technology Assigned Patent

Non-volatile memory
By Francis Pelletier on 2018.06.13

Nuvoton Technology Corporation, Hsinchu, Taiwan, has been assigned a patent (9,984,750) developed by Wang, Cheng-Chih, Hsinchu County, Taiwan, for a "non-volatile memory device and operating method thereof."

The abstract of the patent published by the U.S. Patent and Trademark Office states: "A non-volatile memory, (NVM) device includes a logic memory circuit, a NVM element, a writing circuit and a reading circuit. The input terminal of the writing circuit and the output terminal of the reading circuit are coupled to the output terminal of the logic memory circuit. The first output terminal of the writing circuit and the first input terminal of the reading circuit are coupled to the first terminal of the NVM element. The second output terminal of the writing circuit and the second input terminal of the reading circuit are coupled to the second terminal of the NVM element. During a writing period, the writing circuit writes the stored data of the logic memory circuit into the NVM element. During a reading period, the reading circuit restores the data of the NVM element to the output terminal of the logic memory circuit.

The patent application was filed on January 25, 2017 (15/414,643).

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