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National Technology and Engineering Solutions of Sandia Assigned Patent

Writing and erasing analog information in small memory units via voltage pulses

National Technology and Engineering Solutions of Sandia, LLC, Albuquerque, NM, has been assigned a patent (9,947,379) developed by El Gabaly Marquez, Farid, Berkeley, CA, and Talin, Albert Alec, Dublin, CA, for a “device and methods for writing and erasing analog information in small memory units via voltage pulses.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Devices and methods for non-volatile analog data storage are described herein. In an exemplary embodiment, an analog memory device comprises a potential-carrier source layer, a barrier layer deposited on the source layer, and at least two storage layers deposited on the barrier layer. The memory device can be prepared to write and read data via application of a biasing voltage between the source layer and the storage layers, wherein the biasing voltage causes potential-carriers to migrate into the storage layers. After initialization, data can be written to the memory device by application of a voltage pulse between two storage layers that causes potential-carriers to migrate from one storage layer to another. A difference in concentration of potential carriers caused by migration of potential-carriers between the storage layers results in a voltage that can be measured in order to read the written data.

The patent application was filed on October 6, 2016 (15/287,552).

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