California Institute of Technology Assigned Patent

California Institute of Technology (CALTECH), Pasadena, CA, has been assigned a patent (9,916,197) developed by Jiang, Anxiao, College Station, TX, En Gad, Eyal, Bruck, Jehoshua, and Yaakobi, Eitan, Pasadena, CA, for a “rank-modulation rewriting codes for flash memories.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. It aims at minimizing the cost of changing the state of the memory. In another aspect, multi-cells, used for storing data in flash memories is provided. Each transistor is replaced with a multi-cell of mm transistors connected in parallel. In yet another aspect, multi-permutations, are provided. The paradigm of representing information with permutations is generalized to the case where the number of cells in each level is a constant greater than one. In yet another aspect, rank-modulation rewriting schemes which take advantage of polar codes, are provided for use with flash memory.”

The patent application was filed on June 2, 2015 (14/728,749).