Futurewei Assigned Patent

Futurewei Technologies, Inc., Plano, TX, has been assigned a patent (9,887,008) developed by Lee, Xiaobing, Santa Clara, CA, Wang, Yansong, and Li, Ting, Hangzhou, China, for a “DDR4-SSD dual-port DIMM device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “As a solution to the type of problems noted above, this disclosure provides novel methods and systems that include dual-port solid-state drive, (SSD) DIMM devices to provide primary storage capabilities with very low latency and better availability of DDR4 devices. The dual-port DDR4-SSD flash memory devices guarantee primary storage devices still accessible with one CPU or network failure. The novel DDR4 memory bus devices may be used not only for memory media and storage device buffers, but also to allow two CPUs to share data stored in flash SSD chips and to greatly improve DDR4 bus efficiency and bus utilizations by block accesses and eliminate PCIE-DMA data transfers. Through the features of the claimed subject matter described herein, dual-port DDR4-DIMM memory devices can be achieved that provide an All-Flash-Array storage system with substantially higher reliability, availability, and performance over conventional SATA/SAS-SSD, PCIE-SSD, and NVME-SSD solutions.”

The patent application was filed on March 9, 2015 (14/642,558).