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Rohm Assigned Patent

Manufacturing semiconductor storage device

Rohm Co. Ltd., Kyoto, Japan, has been assigned a patent (9,847,338) developed by Nakao, Yuichi, Kyoto, Japan, for a “semiconductor storage device and method for manufacturing the semiconductor storage device.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A semiconductor storage device includes an insulating layer. A ferroelectric capacitor is on the insulating layer and includes a lower electrode, a ferroelectric film, and an upper electrode. An interlayer insulating film is formed on the insulating layer, and has an opening where the ferroelectric capacitor is disposed. A first metal plug is formed in the insulating layer and connected to the lower electrode via the opening. A second metal plug is embedded in the insulating layer outside the ferroelectric capacitor. A hydrogen barrier film covers the ferroelectric capacitor and the interlayer insulating film. An upper surface of the interlayer insulating film is higher than an upper surface of the first metal plug so that a step is therebetween. The lower electrode is formed on the upper surface of the interlayer insulating film, the upper surface of the first metal plug and the step. The upper surface of the interlayer insulating film and the upper surface of the first metal plug are interlinked via a recessed portion of the interlayer insulating film.

The patent application was filed on March 1, 2017 (15/447,100)

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