Samples of UFS 64-Layer 3D BiCS 3D Flash Memory From Toshiba

Toshiba Memory America, Inc. (TMA) has begun sampling Universal Flash Storage (UFS) devices ^[1] utilizing its 64-layer BiCS FLASH 3D flash memory. ^[2]

This UFS devices meet performance demands for applications that require high-speed R/W performance and low power consumption, including mobile devices such as smartphones and tablets and augmented /virtual reality systems.

This lineup will be available in four capacities: 32, 64, 128, and 256GB ^[3]. All of the devices integrate flash memory and a controller in a single, JEDEC-standard 11.5x13mm package. The controller performs error correction, wear leveling, logical-to-physical address translation, and bad-block management – allowing users to simplify system development.

All four devices are compliant with JEDEC UFS Ver. 2.1, including HS-GEAR3, which has a theoretical interface speed of up to 5.8Gb/s per lane (x2 lanes=11.6Gb/s) while also suppressing any increase in power consumption. Sequential read and write performance ^[4] of the 64GB device are 900MB/s and 180MB/s, while the random read and write performance are approximately 200% and 185% better, respectively, than those of previous generation devices ^[5]. Due to its serial interface, UFS supports duplexing, which enables both concurrent reading and writing between the host processor and UFS device.

The company was the first company ^[6] to announce 3D flash memory technology, and the addition of 3D-based UFS keeps the company at the forefront of innovation while simultaneously enhancing its existing lineup of BiCS FLASH solutions.

“By bringing our industry-leading BiCS FLASH technology to UFS, we continue to expand the capabilities of our embedded storage solutions,” noted Scott Beekman, director, managed flash memory products, TMA. “Higher performance, good power efficiency and an expanded density lineup all enable existing and future applications to realize new possibilities.“

^[1] Universal Flash Storage (UFS) is a product category for a class of embedded memory products built to the JEDEC UFS standard specification.
^[2] Sample shipments of the 64GB device will start today with the rest of the line-up to gradually follow after December.
^[3] Product density is identified based on the density of memory chip(s) within the product, not the amount of memory capacity available for storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications.
^[4] Read and write speeds are calculated as 1MB/s=1,000,000bytes/sec. Actual read and write speed may vary depending on the device, read and write conditions, and file size.
^[5] Toshiba Memory Corporation’s previous generation 64GB device THGAF4G9N4LBAIR
^[6] Prototype announced June, 2007