Opto Tech Assigned Patent

Opto Tech Corporation, Hsinchu, Taiwan, has been assigned a patent (9,786,842) developed by Yan, Ming-Yi, Taoyuan, Taiwan, Lu, Jhih-You, New Taipei, Taiwan, Huang, Hsien-Chih, Hsinchu, Taiwan, Li, Yun-Shiuan, Li, Jiun-Yun, Cheng, I-Chun, Taipei, Taiwan, Lai, Chih-Ming, New Taipei, Taiwan, Huang, Yue-Lin, Kaohsiung, Taiwan, and Peng, Lung-Han, Taipei, Taiwan, for a “memory cell with functions of storage element and selector.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A single memory cell has the functions of a storage element and a selector. The memory cell includes a P-type layer, a tunneling structure and an N-type layer. The tunneling structure is formed on the P-type layer. The N-type layer is formed on the tunneling structure. The tunneling structure is a stack structure including a first material layer, a second material layer and a third material layer. By adjusting a bias voltage that is applied to the P-type layer and the N-type layer, the tunneling structure is controlled to be in the amorphous state or the crystalline state. Consequently, the memory cell has the memorizing and storing functions. The memory cell has the P-type layer, the tunneling structure and the N-type layer. By adjusting the bias voltage, the function of the selector is achieved.”

The patent application was filed on September 30, 2016 (15/281,852).