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Flash Memory Summit: Everspin Launches 1/2 GB nvNITRO NVMe SSDs

Starting at $2,200, up to 1.5 million IO/s, 6μs end-to-end latency

Everspin Technologies, Inc. announced the production release of its nvNITRO line of storage accelerators, designed to deliver fast read and write times with low latency.

The company is launching the initial nvNITRO accelerators with 1 and 2GB capacities, based on 256Mb DDR3 ST-MRAM. The storage accelerators are orderable today, and will ship in Q417. They operate up to 1.5 million IO/s with 6μs end-to-end latency. The firm is delivering a half-height, half-length (HHHL) PCIe card as well as U.2 form factors; both support NVMe and memory mapped IO (MMIO) access modes.

ES1GB-N02 nvNITRO PCIe HHHL accelerator card

Enterprise storage system vendors can leverage MRAM’s memory speed in traditional enterprise storage form factors and protocols.

Company’s ST-MRAM ensures that the data is persistent and power fail safe without the need for supercapacitors or battery backup, saving critical space in storage racks. The high cycle endurance of ST-MRAM also enables unlimited uniform drive writes per day, eliminating the need for complex wear-leveling algorithms that are required in NAND flash-based drives. With firm’s ST-MRAM endurance, there is no degradation in R/W performance over time.

ES1GB-U201, ES2GB-U201 U.2 accelerator

Everspin is proud to announce the production release of our nvNITRO NVMe storage accelerators” said Phill LoPresti, president and CEO, Everspin. “We’ve enjoyed building the ecosystem with our partners to make Spin Torque MRAM a reality for today’s storage market.

Xilinx is pleased to see the combination of production-ready Spin Torque MRAM and our UltraScale FPGAs in the Everspin nvNITRO series. Coupling an ST-MRAM compatible memory controller with extended byte mode capabilities to an NVMe interface inside the Xilinx FPGA reduces latency and simplifies the protection of mission-critical data,” said Manish Muthal, VP, data center, Xilinx, Inc.

We are delighted to have co-developed this groundbreaking ST-MRAM nvNITRO Accelerator and are equally excited about its potential to be disruptive in the storage market” said Mike Rubino, VP, WW engineering, SMART Modular Technologies, Inc.

ES128MB-M201 M.2 accelerator

This high-end performance, combined with consistent low latency, means that demanding applications such as high frequency financial trading systems can depend on faster, more predictable transaction recording. The R/W speed combined with low latency brings value to many storage applications such as database and file system acceleration, online transaction processing log caches, and metadata caching/buffering. The need for higher speed across storage networks and data centers can now be met with the all-MRAM storage devices, providing both block access storage, and byte addressable memory functions on the same platform. The PCIe Gen 3, NVMe interface makes it simple to add this capability to existing storage networks and servers without the need for special drivers or OS changes.

Features and highlights include:

  • 1 and 2GB storage capacities

  • PCIe Gen3 x8, half-height, half-length or U.2 form factor

  • NVMe 1.1+ for block level access

  • Memory mapped IO (MMIO) for byte level access

  • 6μs access latency (2μs with SPDK drivers)

  • Consistent latency (short tail)

  • Customer-defined features using own RTL with programmable FPGA

  • Inherently power fail safe; no system enablement required

  • PCIe peer-to-peer communication for minimum processor overhead and lower latency

  • ES1GB-N03 and ES2GB-N03 HHHL form factor

  • ES1GB-U201 and 2GB ES2GB-U201 U.2 form factor

  • Pricing starting at $2,200

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