STMicroelectronics Assigned Patent
High throughput programming for phase change non-volatile memory
By Francis Pelletier | August 8, 2017 at 2:20 pmSTMicroelectronics S.R.L., Agrate Brianza, MB, Italy, and STMicroelectronics PTE LTD., Singapore, has been assigned a patent (9,697,896) developed by Conte, Antonino, Tremestiere Etneo, Italy, Di Martino, Alberto Jose’, Palagonia, Italy, and Khairnar, Kailash, Leixlip, Ireland, for a “high throughput programming system and method for a phase change non-volatile memory device.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A phase change non-volatile memory device has a memory array with a plurality of memory cells arranged in rows and columns, a column decoder and a row decoder designed to select columns, and, respectively, rows of the memory array during operations of programming of corresponding memory cells. A control logic, coupled to the column decoder and the row decoder, is designed to execute a sequential programming command, to control the column decoder and row decoder to select one column of the memory array and execute sequential programming operations on a desired block of memory cells belonging to contiguous selected rows of the selected column.“
The patent application was filed on February 16, 2015 (14/623,300).