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Flash Memory Summit: Intermolecular’s High-Throughput Experimentation Platform Speeds Discovery of Next-Gen Non-Volatile Memories

In 3D Crosspoint architectures

Intermolecular, Inc. announced its high-throughput experimentation platform for materials discovery for selectors used in next-generation non-volatile memory technology (NVM) in 3D Crosspoint architectures.

Using both PVD and ALD technologies to evaluate chalcogenides, the company has demonstrated its value proposition of performing a high number of experiments in a short period of time, for evaluating a range of complex and/or toxic materials in a rapid and cost effective manner. This allows customers to dramatically speed the screening, discovery and implementation of the right selector materials, while also ensuring their suitability for high-volume manufacturability and reliability.

The rapid move towards next-generation NVM memories in 3D Crosspoint architectures has created a critical need for current steering devices or selectors,” said Milind Weling, SVP, programs and operations, Intermolecular. “Chalcogenides are promising selector materials but the specific elements and composition spaces showing selector behavior per specific key performance metrics is not well known. Using our High-Throughout Experimentation platform, combined with Intermolecular’s extensive know-how and experience with advanced memories and chalcogenides, we can dramatically speed the discovery and reliable characterization of these challenging materials compositions for emerging NVM devices.

Key element in next-generation volatile memories
Studying new materials is expensive, slow and constraining for the speed and quality of materials innovation required, sometimes taking up to six months for their introduction into memory fabs. The complexity, toxicity and diversity of the materials to choose from has proven to be challenging for memory companies, thereby creating a critical need in the industry for better ways to screen and discover selector materials stacks. Chalcogenides have proven challenging to deposit and characterize, yet the advantages they bring are so critical and useful that memory device makers are searching for how to realize these new materials. Co-optimization of chalcogenides for specific compositions and electrical operation enables customers to meet performance, density and reliability specifications for these devices. Use of high-throughput experimentation for such advanced co-optimization can provide memory manufacturers with competitive advantages as they bring next generation memory devices to market. The company has screened thousands of chalcogenide compositions over a four-year period and demonstrated promising selector behavior in several systems with different mechanisms.

Upcoming presentation at Flash Memory Summit (FMS)
The company has a presence at FMS 2017, with participation in two technical panels highlighting the challenges and solutions in developing selector technology for 3D crosspoint memory:

  • 3D XPoint: Current Applications and Implementations; Milind Weling, SVP, programs and operations

  • 3D XPoint in 2022: Where We Are and How We Get There; Karl Littau, senior principal scientist, CTO office

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