Zeno Semiconductor Assigned Patent

Zeno Semiconductor, Inc., Sunnyvale, CA, has been assigned a patent (9,646,693) developed by Widjaja, Yuniarto, San Jose, CA, for a “semiconductor memory having volatile and multi-bit non-volatile functionality and method of operating.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A semiconductor memory cell, semiconductor memory devices comprising a plurality of the semiconductor memory cells, and methods of using the semiconductor memory cell and devices are described. A semiconductor memory cell includes a substrate having a first conductivity type, a first region embedded in the substrate at a first location of the substrate and having a second conductivity type, a second region embedded in the substrate at a second location of the substrate and have the second conductivity type, such that at least a portion of the substrate having the first conductivity type is located between the first and second locations and functions as a floating body to store data in volatile memory, a trapping layer positioned in between the first and second locations and above a surface of the substrate, the trapping layer comprising first and second storage locations being configured to store data as nonvolatile memory independently of one another, and a control gate positioned above the trapping layer.“

The patent application was filed on December 22, 2015 (14/978,956).