National Chiao Tung University Assigned Patent

National Chiao Tung University, Hsinchu, Taiwan, has been assigned a patent (9,548,398) developed by Chung, Steve S., Hsinchu, Taiwan, and Hsieh, E-Ray, Kaohsiung, Taiwan, for a “NAND type variable resistance random access memory and methods.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A high density NAND-type nonvolatile resistance random access storage circuit and its operations are shown herein . A unit memory cell of the circuit includes a field effect transistor, (FET) with a resistance changeable component connected to its gate electrode. The field effect transistor is an n-channel field effect transistor or a p-channel field effect transistor. By applying the voltage or current between the top electrode of the resistive random access component and the FET drain or source electrode, more than two stable states can be maintained such that these states can be drawn from the FET drain or source terminal. The NAND circuit includes the above unit cell as a center to form a multi-bit memory. The circuit consists of multi-bit memories connected in series, has a NAND logic gate function, and forms output of this NAND circuit which can be drawn in a form of series output.“

The patent application was filed on July 24, 2015 (14/807,899).