Rohm Assigned Patent

Rohm Co., Ltd., Kyoto, Japan, has been assigned a patent (9,515,174) developed by Nakao, Yuichi, Kyoto, Japan, for a “method of manufacturing a semiconductor storage device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method for manufacturing a semiconductor storage device includes forming a first insulating film on a semiconductor substrate, forming a first conductive layer, forming a trench in the semiconductor substrate and the first conductive layer by etching, forming a deposition layer by depositing an insulating material in the trench, removing by etching a side portion of the deposition layer to form a side surface that has a flat surface and a curved surface with a lower edge that is in contact with a side surface of the first conductive layer and to form a gap between the curved and the side surfaces, forming a second conductive layer, removing the deposition layer until at least the curved surface of the side surface is exposed to form an embedded insulator in the trench, forming a second insulating film, and forming a control gate on the embedded insulator and the second insulating film.“

The patent application was filed on October 15, 2013 (14/054,298).