Avalanche Technology Begins Volume Production of STT-MRAM on 300mm Wafers

Avalanche Technology, Inc. has entered into a manufacturing agreement with Sony Semiconductor Manufacturing Corporation to begin production of it’s Spin Transfer Torque Magnetic RAM (STT-MRAM) on 300mm wafers at various advanced geometry nodes.

Volume production is expected in early 2017 at Sony Semiconductor Manufacturing in Japan to address a range of applications for this non-volatile memory technology.

This partnership with Sony Semiconductor will help the adoption of perpendicular Magnetic Tunnel Junction (pMTJ)-based STT-MRAM and validate the accepted industry belief that STT-MRAM is the memory technology of choice for a of applications.

“Avalanche is working on breakthrough memory products.  As a result, we are able to address a very large non-volaile memory market with a wide range of requirements.  STT-MRAM is an ideal solution for markets such as Storage, Automotive, IoT and embedded applications,” said Petro Estakhri, founder and CEO, Avalanche.

“We are pleased to partner with Avalanche Technology on the production of pMTJ based STT-MRAM,” said Toshiyuki Yanase, representative of Yamagata Technology Center, Sony Semiconductor.  “Working with Avalanche Technology, we look forward to manufacturing MRAM products that meet current and future demands in the memory market.“