Phison Electronics Assigned Twelve Patents
Flash drive, storing method, memory control circuit unit and memory storage, data management method, memory controller and memory storage device, operating method of NAND flash memory unit, storing method, memory control circuit unit and memory storage, storage device, command executing method, connector and memory storage, flash drive, storage apparatus and production method
By Francis Pelletier | October 21, 2016 at 2:12 pmFlash drive
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (9,454,182) developed by Sam, U-Hou, Miaoli, Taiwan, and Liu, Shu-Min, Taichung, Taiwan, for a “flash drive.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A flash drive suitable for being electrically connected to an electronic device is provided. The flash drive includes a storage module and a first connector. The storage module is a plate and has a main surface. An area of the main surface is not less than areas of other surfaces of the plate. The first connector stands on the main surface and is electrically connected to the storage module. The first connector is electrically connected to the electronic device along an axis, and the axis is not parallel to the surface.“
The patent application was filed on May 29, 2014 (14/289,669).
Data storing method, memory control circuit unit and memory storage
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (9,448,868) developed by Liang, Ming-Jen, Hsinchu, Taiwan, for a “data storing method, memory control circuit unit and memory storage apparatus.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A data storing method, a memory control circuit unit, and a memory storage apparatus are provided. The method includes recording a bit error count of every predetermined area of every physical erasing unit and determining whether the bit error count of one of the predetermined areas of the physical programming unit of the physical erasing unit is more than a threshold bit error count. If the bit error count of one of the predetermined areas of the physical programming unit of the physical erasing unit is more than the threshold bit error count, the method also includes storing data under a second programming mode after an erasing operation is performed on the physical easing unit. Accordingly, defective physical erasing units may be effectively employed to prolong the lifespan of the memory storage apparatus.“
The patent application was filed on June 6, 2014 (14/297,649).
Data management method, memory controller and memory storage device
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (9,442,834) developed by Huang, Yi-Hsiang, Hsinchu, Taiwan, and Chan, Chao-Ming, Hsinchu County, Taiwan, for a “data management method, memory controller and memory storage device.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A data management method for a rewritable non-volatile memory module including a first memory unit and a second memory unit is provided. The method includes: grouping erasing units of the first memory unit into a data area and a spare area, and grouping the physical erasing units of the second memory unit into a data backup area and a command recording area, configuring multiple logical addresses to map to the physical erasing units associated with the data area, receiving a write command which instructs writing data, writing the data to a physical erasing unit associated with the spare area, and writing the data to a physical erasing unit associated with the data backup area, recording at least a portion of the write command in a physical erasing unit associated with the command recording area. Accordingly, data is backuped in the rewritable non-volatile memory module.“
The patent application was filed on October 2, 2012 (13/633,140).
Operating method of NAND flash memory unit
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (9,437,309) developed by Lin, Wei, Taipei, Taiwan, Hsu, Yu-Cheng, Yilan County, Taiwan, and Cheng, Kuo-Yi, Taipei, Taiwan, for a “operating method of NAND flash memory unit.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A NAND flash memory unit, an operating method and a reading method are provided. The NAND flash memory unit includes a plurality of gate layers, a tunnel layer, a charge trapping layer, a conductor layer and a second dielectric layer. A first dielectric layer is included between two adjacent gate layers among the gate layers. The tunnel layer, the charge trapping layer, the conductor layer, and the second dielectric layer penetrate the gate layers. The charge trapping layer is disposed between the tunnel layer and the gate layers, and the second dielectric layer is disposed between the conductor layer and the tunnel layer. Therefore, an erasing speed may be increased, the charge trapping layer may be repaired, the controllability of the gate layers may be increased.“
The patent application was filed on November 17, 2015 (14/943,035).
Data storing method, memory control circuit unit and memory storage
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (9,436,547) developed by Yeh, Chih-Kang, Kinmen County, Taiwan, for a “data storing method, memory control circuit unit and memory storage device.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A data storing method, a memory control circuit unit and a memory storage device are provided. The method includes: generating a parity according to first data. The method also includes: when programming the first data into first physical programming unit, programming at least one mark into redundancy bit area of the first physical programming unit. The method further includes: programming the parity into at least one second physical programming unit arranged after the first physical programming unit, and the at least one mark indicates that the parity is programmed into the at least one second physical programming unit.“
The patent application was filed on September 22, 2014 (14/492,081).
Data managing method, memory control circuit unit and memory storage
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (9,431,132) developed by Liang, Li-Chun, Kaohsiung, Taiwan, Lai, Kuo-Hsin, Hsinchu County, Taiwan, Shih, Pei-Yu, Taipei, Taiwan, and Wang, Tien-Ching, Kaohsiung, Taiwan, for a “data storing method, memory control circuit unit and memory storage device.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A data managing method, and a memory control circuit unit and a memory storage apparatus using the same are provided. The data managing method including: reading a first data stream from a first physical erasing unit according to a first reading command, wherein the first data stream includes first user data, a first error correcting code and a first error detecting code. The method also includes: using the first error correcting code and error detecting code to decode the first user data and determining whether the first user data is decoded successfully. The method further includes: if the first user data is decoded successfully, transmitting corrected user data obtained by correctly decoding the first user data to the host system in response to the first reading command.“
The patent application was filed on June 18, 2014 (14/307,509).
Data access method, memory control circuit unit and memory storage
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (9,430,327) developed by Yeh, Chih-Kang, Kinmen County, Taiwan, for a “data access method, memory control circuit unit and memory storage apparatus.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A data access method for a rewritable non-volatile memory module is provided. The method includes: filling dummy data to first data in order to generate second data, and writing the second data and an error checking and correcting code, (ECC code) corresponding to the second data into a first physical programming unit. The method also includes: reading data stream from the first physical programming unit, wherein the data stream includes third data and the ECC code. The method further includes: adjusting the third data according to a pattern of the dummy data in order to generate fourth data when the third data cannot be corrected by using the ECC code, and using the ECC code to correct the fourth data in order to obtain corrected data, wherein the corrected data is identical to the second data.“
The patent application was filed on December 17, 2014 (14/572,793).
Programming data, memory storage device and memory control circuit unit
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (9,430,325) developed by Liang, Ming-Jen, Hsinchu, Taiwan, for a “method for programming data, memory storage device and memory control circuit unit.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method for programming data, a memory storage device and a memory control circuit unit are provided. The method includes: receiving a writing command which instructs to write data to a logical address belonging to a logical programming unit, if a physical erasing unit of a physical programming unit which the logical programming unit is mapped to is a first type physical erasing unit, programming the data and a parity code corresponding to the data into the physical programming unit according to a first code rate, and if the physical erasing unit is a second type physical erasing unit, programming the data and the parity code corresponding to the data into the physical programming unit according to a second code rate. The first code rate is higher than the second code rate. Therefore, the lifespan of the physical erasing unit having a higher bit error rate may be extended.“
The patent application was filed on June 12, 2014 (14/302,445).
Storage device
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (9,425,569) developed by Lin, Wei-Hung, Hsinchu County, Taiwan, for a “storage device.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A storage device includes a base and a storage unit. The base is a conductor of electricity. The storage unit has a first connecting interface and a second connecting interface. The storage unit is disposed on the base, and the base is electrically connected to the first connecting interface or the second connecting interface.“
The patent application was filed on April 14, 2014 (14/251,645).
Command executing method, connector and memory storage
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (9,424,206) developed by Tseng, Ming-Hui, and Seng, Kian-Fui, Hsinchu, Taiwan, for a “command executing method, connector and memory storage device.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A command executing method, a connector and a memory storage device are provided. The command executing method includes: receiving at least one command and at least one tag corresponding to the command from a host system, and temporarily storing the command in a command queue, transmitting the tag to the host system and executing the command, determining whether an operating status of the memory storage device meets a predetermined condition, and if the operating status meets the predetermined condition, transmitting a configuration message to the host system to release the tag from corresponding to the command. Accordingly, the access bandwidth of the memory storage device is increased.“
The patent application was filed on August 21, 2013 (13/971,838).
Flash drive
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (9,395,768) developed by Huang, Po-Tsang, Miaoli County, Taiwan, and Chang, Chun-Yao, Changhua County, Taiwan, for a “flash drive.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A flash drive including a housing, a storage module, and at least one elastic member is provided. The housing is flexible and an inner space is formed by the housing. The storage module is movably disposed in the inner space. The elastic member is disposed in the inner space and connected between the storage module and the housing. The housing is adapted to be deformed by a force to compress the inner space, so as to drive a portion of the storage module to be exposed outside the housing and deform the elastic member.“
The patent application was filed on September 22, 2014 (14/492,078).
Storage apparatus and production method
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (9,390,764) developed by Chung, Hung-I, and Chen, Chang-Chih, Hsinchu County, Taiwan, for a “storage apparatus and production method thereof.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A storage apparatus including a storage element and a fitting member is provided. The storage element includes a body, a first pad set and a second pad set. The first and the second pad sets are exposed out of the body and located at opposite sides of the body. The fitting member comprises a first terminal set and a second terminal set electrically connected to each other. The storage element is detachably assembled to the fitting member. The first terminal set electrically connected to the first pad set and the second terminal set located between the first pad set and the second pad set, the second terminal set and the second pad set form a connecting interface of the storage apparatus that the storage apparatus is used for being electrically connected to an external apparatus. A production method of the storage apparatus is further provided.“
The patent application was filed on September 2, 2013 (14/016,211).