Institute of Microelectronics Assigned Patent

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China, has been assigned a patent (9,437,609) developed by Huo, Zongliang, and Liu, Ming, Beijing, China for a “vertical channel-type 3D semiconductor memory device and method for manufacturing the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A vertical channel-type 3D semiconductor memory device and a method for manufacturing the same are disclosed. In one aspect, the device includes a multi-layer film formed by depositing alternating layers of insulation and an electrode material on a substrate. The device also includes through-holes formed by etching the film to the substrate. The device also includes gate stacks formed by depositing barrier storage and a tunnel layers in sequence on inner walls of the through-holes. The device also includes hollow channels formed by depositing a channel material on the tunnel layer. The device also includes drains for bit-line connection in top portions of the hollow channels. The device also includes sources formed in contact regions between through-holes and the substrate in bottom portions of the hollow channels.“

The patent application was filed on December 23, 2014 (14/581,990).