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Toshiba and SK Hynix Assigned Patent

Magnetic memory

Kabushiki Kaisa Toshiba, Tokyo, Japan, and SK Hynix, Inc., Icheon-si, Gyeonggi-do, Korea, has been assigned a patent (9,385,304) developed by Nakayama, Masahiko, Kai, Tadashi, Toko, Masaru, Yoda, Hiroaki, Seoul, Korea, Lee, Hyung Suk, Oh, Jae Geun, Icheon-si, Korea, Ryu, Choon Kun, Seoul, Korea, and Lee, Min Suk, Seongnam-si, Korea, for a “magnetic memory and method of manufacturing the same.

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metal material, a stacked body above the conductive layer, and including a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer between the first magnetization film and the second magnetization film, and an insulating layer on a side face of the stacked body, and containing an oxide of the first metal material. The first magnetization film and/or the second magnetization film includes a first region positioned in a central portion, and a second region positioned in an edge portion and containing As, P, Ge, Ga, Sb, In, N, Ar, He, F, Cl, Br, I, Si, B, C, O, Zr, Tb, S, Se, or Ti.

The patent application was filed on March 10, 2014 (14/203,249).

 

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