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3D super-NAND Memory at Lowest Cost-per-Bit: $0.02/GB

Announced fabless semiconductor company BeSang.

Fabless semiconductor company headquartered in Beaverton, OR, BeSang Inc., a pioneer in the monolithic 3-dimensional (3D) integrated circuits, announced its proprietary 3D super-NAND development.

BeSang’s proprietary 3D super-NAND flash memory

We are pleased to announce 3D super-NAND which is expected to be the lowest cost-per-bit in the NAND market,” said Dr. Sang-Yun Lee, founder and CEO, BeSang. “For the first time in the semiconductor industry, 3D super-NAND brings parallel manufacturing process in order to achieve maximum productivity, where the parallel manufacturing means independent wafer processing of memory periphery logic at affordable old generation technology node and advanced 3D memory cells on top of the periphery.”

Other 3D NAND has sequential manufacturing process to build stacked memory layers, staircase bit line contacts, and periphery logic. It takes usually more than 10 weeks to complete manufacturing process. However, 3D super-NAND takes only 5 days to complete advanced 3D non-volatile memory cells thanks to parallel manufacturing,” said Dr. Yohwan Koh, former SVP and head of NAND business, SK hynix, Inc., and recently joined advisor at BeSang.

Compared to 48-layer 3D NAND, BeSang expects its 1-layer 3D super-NAND to have 5 to 10 times better cost-per-bit.

BeSang plans to bring 3D super-NAND to the market along with industry partners in 2016.

Read also:
3D NAND Flash at 2 Cents per GB
BeSang wants to lower barrier to 3D NAND flash

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