Entegris Assigned Patent

Entegris, Inc., Billerica, MA, has been assigned a patent (9,385,310) developed by Zheng, Jun-Fei, Westport, CT, for a “phase change memory structure comprising phase change alloy center-filled with dielectric material.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A phase change memory structure, including a substrate having a cavity extending from a surface of the substrate into an interior region thereof, wherein the cavity is bounded by side wall surface, wherein the cavity is coated on the side wall surface with a film of phase change memory material defining a core that is at least partially filled with dielectric material such as alumina. Such phase change memory structure can be fabricated in a substrate containing a cavity closed at one end thereof with a bottom electrode, by a method including: conformally coating sidewall surface of the cavity and surface of the bottom electrode closing the cavity, with a phase change memory material film, to form an open core volume bounded by the phase change memory material film, at least partially filling the open core volume with alumina or other dielectric material, and forming a top electrode at an upper portion of the cavity.“

The patent application was filed on April 27, 2013 (13/872,087).