Khalifa University of Science Assigned Patent

Hybrid memory cell with memristor and complementary metal-oxide semiconductor
By Francis Pelletier on 2016.05.04

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Khalifa University of Science, Technology and Research, Kustar, Abu Dhabi, United Arab Emirates, has been assigned a patent (9,299,425) developed by Mohammad, Baker Shehadah, and Al-Homouz, Dirar, Abu Dhabi, United Arab Emirates, for a “system and a method for designing a hybrid memory cell with memristor and complementary metal-oxide semiconductor.

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”The embodiments herein relates to a hybrid non-volatile memory cell system and architecture for designing integrated circuits. The system comprises CMOS access transistor connected to a memristor which stores a data based on a resistance. The system has a word line for accessing the hybrid memory and two bit lines carrying data of mutually opposite values for transferring a data from the memory. The two terminals of the transistor are connected respectively to a first terminal of the memristor and to a first bit line. The gate terminals of the transistors are coupled together to form a word line. The access transistors control the two bit lines during a read and write operation. A control logic performs a read and write operation with the hybrid memory cells. The memory architecture prevents a power leakage during data storage and controls a drift in a state during a read process.

The patent application was filed on September 2, 2014 (14/474,339).