Semiconductor Manufacturing International Assigned Patent

Semiconductor Manufacturing International, (Beijing) Corporation, Beijing, China and Semiconductor Manufacturing International, (Shanghai) Corporation, Shanghai, China, has been assigned a patent (9,202,885) developed by Zhang, Chao, Shanghai, China, for a “nanoscale silicon Schottky diode array for low power phase-change memory.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Methods and devices associated with a phase change memory include Schottky diodes operating as selectors having a low turn-on voltage, low sneak current and high switching speed. A method of forming a semiconductor device includes providing a semiconductor substrate having a diode array region and a peripheral device region, forming an N+ buried layer in the diode array region, forming a semiconductor epitaxial layer on the N+ buried layer, and forming deep trench isolations through the epitaxial layer and the N+ buried layer along a first direction. The method also includes forming shallow trench isolations in the diode array region and in the peripheral region along a second line direction. The method also includes forming an N- doped region between the deep and shallow trench isolations and forming a metal silicide on a surface of the N- doped region.“

The patent application was filed on March 7, 2014 (14/201,525).