FlashSilicon Assigned Patent

FlashSilicon, Inc., Diamond Bar, CA, has been assigned a patent (9,214,465) developed by Wang, Lee, Diamond Bar, CA, for a “structures and operational methods of non-volatile dynamic random access memory.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A Dynamic Random Access Memory, (DRAM) cell and a semiconductor Non-Volatile Memory, (NVM) cell are incorporated into a single Non-Volatile Dynamic Random Access Memory, (NVDRAM) cell. The NVDRAM cell is operated as the conventional DRAM cell for read, write, and refreshment on dynamic memory applications. Meanwhile the datum in the NVM cells can be directly loaded into the correspondent DRAM cells in the NVDRAM cell array without applying intermediate data amplification and buffering leading to high speed non-volatile data access. The datum in DRAM cells can be also stored back to the correspondent semiconductor NVM cells in the NVDRAM cells for the datum required for non-volatile data storage. The NVDRAM of the invention can provide both fast read/write function for dynamic memory and non-volatile memory storage in one unit memory cell.“

The patent application was filed on July 24, 2012 (13/557,145).