CEA Assigned Patent
Programming non-volatile resistive memory
By Francis Pelletier | December 25, 2015 at 1:44 pmCommissariat à l’Energie Atomique et aux Energies Alternatives (CEA), Paris, France, has been assigned a patent (9,183,930) developed by Perniola, Luca, Noyarey, France, for a “method of programming a non-volatile resistive memory.”
The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method for pre-programming a matrix of resistive non-volatile memory cells, the cells including a dielectric material between two conducting electrodes and being initially in an original resistive state, the dielectric material being electrically modified to bring a cell from the original state to another resistive state wherein the resistance of the cell is at least twice and preferably at least ten times lower than the resistance of the cell in the original state. The method includes, prior to mounting a component containing the matrix on a support, programming the matrix by electrically bringing cells from the original state to the other state, leaving the other cells in their original state, and after mounting the component, applying to all the cells an intermediate voltage, to keep in the original state the cells in this state and returning or keeping to/in another state the cells not in the original state.“
The patent application was filed on February 7, 2014 (14/175,320).