Toshiba NAND Flash Memory Products for Embedded Applications

Toshiba Corporation launched a line-up of NAND flash memory products for embedded applications that are compatible with the widely used Serial Peripheral Interface (SPI).

Wide ranging applications for the ‘Serial Interface NAND’ include such consumer applications as flat-screen TVs, printers and wearable devices, and industrial applications, including robots. Users can choose from a line-up of 12 products that offers three densities, 1Gb, 2Gb and 4Gb; two packages, WSON ^(*1) and SOP ^(*2); and two power supply voltages. Samples shipment starts today and mass production is scheduled to begin with the 1Gbit products from December. Mass production of the remaining line-up will follow.

Compatibility with the SPI, which can be controlled with just six pins, allows the ‘Serial Interface NAND’ to be used as SLC NAND flash memory, with a low pin count, small package and large capacity.

NOR flash memory is typically used in embedded applications for consumer and industrial devices. However, in order to realize extra functionality in embedded devices, demand is growing for larger memory densities for saving software (including boot up programs, firmware, and embedded OS) and data (including log data) This is driving demand for SLC NAND fash memory, which offers higher density and reliability and a lower bit cost than NOR flash memory.

By adding the ‘Serial Interface NAND’ to its product line-up, Toshiba aims to meet wide ranging market needs and to expand the market for NAND flash memory.

^(*1) WSON: Very-Very thin Small Outline No Lead Package
(^*2) SOP: Small Outline Package

Outline of products:

Part Number	Density	I/O	Voltage	Package	Mass Production
TC58CVG0S3HRAIF	1Gbit	x1, x2, x4	3.3V	WSON	Dec. 2015
TC58CVG0S3HQAIE			3.3V	SOP	Dec. 2015
TC58CYG0S3HRAIF			1.8V	WSON	1Q(Jan.-Mar.) 2016
TC58CYG0S3HQAIE			1.8V	SOP	1Q(Jan.-Mar.) 2016
TC58CVG1S3HRAIF	2Gbit		3.3V	WSON	1Q(Jan.-Mar.) 2016
TC58CVG1S3HQAIE			3.3V	SOP	1Q(Jan.-Mar.) 2016
TC58CYG1S3HRAIF			1.8V	WSON	1Q(Jan.-Mar.) 2016
TC58CYG1S3HQAIE			1.8V	SOP	1Q(Jan.-Mar.) 2016
TC58CVG2S0HRAIF	4Gbit		3.3V	WSON	Dec. 2015
TC58CVG2S0HQAIE			3.3V	SOP	Dec. 2015
TC58CYG2S0HRAIF			1.8V	WSON	1Q(Jan.-Mar.) 2016
TC58CYG2S0HQAIE			1.8V	SOP	1Q(Jan.-Mar.) 2016

Key Features of products:

Uses cutting-edge 24nm process technology for SLC NAND.
Compatible with the widely used SPI, which can be controlled with a low pin count of six pins.
Available in small and versatile packages. The WSON package size is 6.0×8.0mm and the SOP package size is 10.3×7.5mm. The packages and the pin assignments are compatible with common serial flash memories. Products in the BGA ^(*3) package are also under development.
Embedded ECC with bit flip count report function.
Embedded data protection features.

^(*3) BGA: Ball Grid Array. The package will be 6.0×8.0mm, 5 ballx5 ball.

Key specifications of products:

Density	1Gb / 2Gb / 4Gb
Page Sizes	2KB (1Gb, 2Gb), 4KB (4Gb)
Interface	Serial Peripheral Interface Mode 0, Mode 3
I/O	x1, x2, x4
Voltages	2.7-3.6V, 1.7-1.95V
Operating Temperature Range	-40°C to 85°C
Packages	・8pin WSON (6×8mm) ・16pin SOP (10.3×7.5mm)
Others	・High speed sequential read function ・ECC function (ON/OFF, bit flip count report) ・Data protection function (able to protect specific blocks) ・Parameter page function (able to output detailed information on the device)