ITRI Assigned Patent

Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan, has been assigned a patent (9,142,769) developed by Chen, Frederick T, Zhubei, Taiwan, for a “magnetic field-partitioned non-volatile memory.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A non-volatile memory cell and a magnetic field-partitioned non-volatile memory for multi-bit storage are provided. The non-volatile memory cell for multi-bit storage includes a bottom electrode. A resistance-changing memory material covers the bottom electrode. A top electrode including a high-mobility material is disposed on the resistance-changing memory material. The top electrode has two post portions supporting a bar-shaped portion. At least two bits are stored in portions of the resistance-changing memory material connecting to the top electrode when an external magnetic field is applied along different directions.“

The patent application was filed on October 9, 2014 (14/510,405).