Tsinghua University and Hon Hai Precision Industry Assigned Patent

Tsinghua University, Beijing, China, and Hon Hai Precision Industry Co., Ltd., New Taipei, Taiwan, has been assigned a patent (9,099,644) developed by Liu, Peng, Li, Qun-Qing, Jiang, Kai-Li, and Fan, Shou-Shan, Beijing, China, for a “phase change memory cell.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A phase change memory cell includes a first circuit and a second circuit. The first circuit comprises a first electrode, a carbon nanotube layer and a second electrode electrically connected in series. The first circuit is adapted to write data into the phase change memory cell or reset the phase change memory cell. The second circuit comprises a third electrode, a phase change layer and a fourth electrode electrically connected in series, at least part of the phase change layer is overlapped with the carbon nanotube layer. The second circuit is adapted to read data from the phase change memory cell or reset the phase change memory cell.“

The patent application was filed on December 21, 2011 (13/332,480).