Seoul National University R&D Assigned Patent
Ferroelectric memory device
By Francis Pelletier | September 7, 2015 at 2:33 pmSeoul National University R&D B Foundation, Seoul, Korea, has been assigned a patent (9,105,345) developed by Noh, Tae Won, Lee, Daesu, Seoul, Korea, and Yoon, Jong-Gul, Suwon-si, Korea, for a “ferroelectric memory device and method for manufacturing same.”
The abstract of the patent published by the U.S. Patent and Trademark Office states: ”The present invention relates to a ferroelectric memory device having a multilevel polarization, (MLP) state generated due to adjustment of a displacement current and to a method for manufacturing the ferroelectric memory device.“
The patent application was filed on August 31, 2012 (14/242,000).