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Seoul National University R&D Assigned Patent

Ferroelectric memory device

Seoul National University R&D B Foundation, Seoul, Korea, has been assigned a patent (9,105,345) developed by Noh, Tae Won, Lee, Daesu, Seoul, Korea, and Yoon, Jong-Gul, Suwon-si, Korea, for a “ferroelectric memory device and method for manufacturing same.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”The present invention relates to a ferroelectric memory device having a multilevel polarization, (MLP) state generated due to adjustment of a displacement current and to a method for manufacturing the ferroelectric memory device.

The patent application was filed on August 31, 2012 (14/242,000).

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