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CNRS and Montpellier University 2 Assigned Patent

Memory cell with volatile and non-volatile storage

Centre National de la Recherche Scientifique (CNRS), France and Universite Montpellier 2, France, has been assigned a patent (9,053,782) developed by Guillemenet, Yoann, Crest, France, and Torres, Lionel, Combaillaux, France, for a “memory cell with volatile and non-volatile storage.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”The invention concerns a memory device comprising at least one memory cell comprising: first and second pairs of cross-coupled transistors, and a first resistance switching element, (202) coupled between a first supply voltage, (VDD, GND) and a first transistor of said first pair of transistors and programmed to have one of first and second resistances, and control circuitry adapted to store a data value, (D.sub.NV) at said first and second storage nodes by coupling said first storage node to said second supply voltage, (V.sub.DD, GND), the data value being determined by the programmed resistance of the first resistance switching element.

The patent application was filed on June 14, 2012 (14/126,051).

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