NaMLab Assigned Patent
Ferroelectric memory cell for IC
By Francis Pelletier | July 20, 2015 at 3:05 pmNaMLab GmbH, Dresden, Germany, has been assigned a patent (9,053,802) developed by Muller, Stefan Ferdinand, Yurchuk, Ekaterina, and Schroder, Uwe, Dresden, Germany, for a “ferroelectric memory cell for an integrated circuit.”
The abstract of the patent published by the U.S. Patent and Trademark Office states: ”An integrated circuit includes a ferroelectric memory cell. In one embodiment, the ferroelectric memory cell includes a first oxide storage layer, a second oxide storage layer, and an amorphous layer disposed between the first and second oxide storage layers. Each of the first and second oxide storage layers includes a ferroelectric material that is at least partially in a ferroelectric state and further includes, as main components, oxygen and any of the group consisting of Hf, Zr and (Hf,Zr).“
The patent application was filed on June 4, 2013 (13/909,394).