… As Well as Toshiba …

Toshiba Corporation announced development of the world’s first 48-layer*1 three dimensional stacked cell structure flash memory*2 called BiCS, a 2-bit-per-cell 128b (16GB) device.

Sample shipments of products using the new process technology just started.

The BiCS is based on a 48-layer stacking process, which enhances the reliability of write /erase endurance and boosts write speed, and is suited for use in diverse applications, primarily SSDs.

Since making the world’s first announcement of technology for 3D flash memory*3, Toshiba has continued development towards optimizing mass production. To meet further market growth in 2016 and beyond, it is promoting the migration to 3D flash memory by rolling out a product portfolio that emphasizes large capacity applications, such as SSD.

The company is also readying for mass production in the new Fab2 at Yokkaichi Operations, its production site for NAND flash memories. Fab2 is now under construction and will be completed in the first half of 2016, to meet demand for flash memory.

*1: As of March 26, 2015. Toshiba survey.
*2: A structure stacking flash memory cells vertically direction from a silicon plane realizing significant desity improvement over conventional NAN that flash memory, where cells are arrayed in a planar direction on a silicon plane.
*3: Toshiba presentation, June 12th, 2007.