Industrial Technology Research Institute Assigned Patent

Industrial Technology Research Institute, Chutung, Hsinchu, Taiwan, has been assigned a patent (8,942,027) developed by Chuang, Ching-Hao, Huatan Township, Taiwan, Chang, Meng-Fan, Taichung, Taiwan, Sheu, Shyh-Shyuan, Taipei, Taiwan, and Lin, Zhe-Hui, Fuxing Township, Taiwan, for a “memory storage circuit and method of driving memory storage circuit.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory storage circuit includes a volatile memory portion, a control portion, and a non-volatile memory portion. The volatile memory portion includes a first node and a second node to store a pair of complementary logic data. The control portion includes a first transistor and a second transistor. Gate electrodes of the first and second transistors are coupled to receive a store signal, and first electrodes of the first and second transistors are coupled to receive a control signal. The non-volatile memory portion includes a first resistive memory element and a second resistive memory element to store the pair of complementary logic data. The first resistive memory element is coupled between a second electrode of the first transistor and the first node, and the second resistive memory element is coupled between a second electrode of the second transistor and the second node.“

The patent application was filed on July 10, 2013 (13/939,062).