Globalfoundries Invested in Everspin

Everspin Technologies, Inc., a developer and manufacturer of discrete and embedded MRAM, has partnered with GLOBALFOUNDRIES, Inc. to build processed 300mm wafers with its magnetic tunnel junction (MTJ) Spin-Torque Magneto-resistive Random-Access Memory (ST-MRAM) technology, starting with GLOBALFOUNDRIES 40nm and 28nm Low Power CMOS platforms.

This relationship forms the core of Everspin’s long-term strategy to proliferate ST-MRAM into the marketplace by offering designers of storage systems a fast, non-volatile memory solution featuring low latency and increased reliability.

GLOBALFOUNDRIES has invested in advanced ST-MRAM CMOS processing equipment to deliver the processed CMOS and MRAM wafers beginning with its 40nm technology node.

It has also invested an undisclosed amount in Everspin.

“Everspin’s experience in shipping over 40 million MRAM products to the market, as well as designing and launching the first commercially-available ST-MRAM, together with our manufacturing capability will establish the industry’s first 300mm ST-MRAM technology,” said Gregg Bartlett, senior VP of product management, GLOBALFOUNDRIES. “Our partnership with Everspin will help drive ST-MRAM adoption and feed the rapidly growing MRAM market.“

“GLOBALFOUNDRIES is a pioneer in delivering value-added and fully-integrated memory solutions for a multitude of markets and applications,” said Phill LoPresti, president and CEO, Everspin. “Our partnership with a world-class foundry is a fundamental piece of our long-term strategy to deliver ST-MRAM on 300mm, accelerate availability of our perpendicular MTJ ST-MRAM bit cell, fast-track ST-MRAM production in advanced CMOS technology nodes, secure high volume capacity for our customers, and scale ST-MRAM towards Gigabit densities to further expand the market and application uses of Everspin ST-MRAM products.“