OCZ Assigned Patent
Flash memory device and programming method equalizing wear-level
By Jean Jacques Maleval | July 31, 2014 at 2:45 pmOCZ Storage Solutions, Inc., San Jose, CA, has been assigned a patent (8,756,464) developed by Bumsoo Kim, Hyunmo Chung, and Hanmook Park, Seongnam-si, South Korea, for a “flash memory device and flash memory programming method equalizing wear-level.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “Disclosed are a flash memory device and flash memory programming method that equalizes a wear-level. The flash memory device includes a memory cell array, an inversion determining unit to generate a programming page through inverting or not inverting a data page based on a number of `1`s and `0`s in the data page, a programming unit to store the generated programming page in the memory cell array; and a data verifying unit to read the programming page stored in the memory cell array, to restore the data page from the programming page according to whether an error exists in the read programming page, and to output the restored data page, and thereby can equalize a wear-level of a memory cell.”
The patent application was filed on Aug. 25, 2008 (12/811,001).
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