… And From Partner SanDisk
Ramping on two and three bits-per-cell
This is a Press Release edited by StorageNewsletter.com on April 28, 2014 at 2:41 pmSanDisk Corporation announced the availability of its 15nm technology, the most advanced NAND flash process node in the world.
The 15nm technology will ramp on both two bits-per-cell (X2) and three bits-per-cell (X3) NAND flash memory architectures with production ramp to begin in the second half of 2014.
“We are thrilled to continue our technology leadership with the industry’s most advanced flash memory process node, enabling us to deliver the world’s smallest and most cost effective 128Gb chips,” said Dr. Siva Sivaram, SVP, memory technology, SanDisk. “We are delighted that these new chips will allow us to further differentiate and expand our portfolio of NAND flash solutions.”
The 15nm technology uses many process innovations and cell-design solutions to scale the chips along both axes. SanDisk’s All-Bit-Line (ABL) architecture, which contains proprietary programming algorithms and multi-level storage management schemes, has been implemented in the 1Z technology to deliver NAND flash solutions with no sacrifice in memory performance or reliability. SanDisk’s 1Z technology will be utilized across its range of solutions, from removable cards to enterprise SSDs.